Features: • 'Trench' technology• Low on-state resistance• Fast switching• Logic level compatibleApplication• d.c. to d.c. converters• switched mode power suppliesPinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSSVDGRVGSVGSMIDIDMPto...
PHD11N03LT: Features: • 'Trench' technology• Low on-state resistance• Fast switching• Logic level compatibleApplication• d.c. to d.c. converters• switched mode power supplies...
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Features: ·Low gate charge·Low on-state resistance.Application·Optimized as a control FET in DC to...
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDSS VDGR VGS VGSM ID IDM Ptot Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage Pulsed gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 175 Tj = 25 to 175; RGS = 20 kW Tj 150 Tmb = 25 Tmb = 100 Tmb = 25 Tmb = 25 |
- - - - - - - - - 55 |
30 30 ± 15 ± 20 10.3 7.3 41 33 175 |
V V V V A A A W |
PHD11N03LT N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using 'trench' technology.