Features: · High-speed switching· No secondary breakdown.Application· Universal line interface in telephone sets· Relay, high-speed and line transformer drivers.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per FET VDS drain-source voltage (DC)N-channelP-channel ...
PHC2300: Features: · High-speed switching· No secondary breakdown.Application· Universal line interface in telephone sets· Relay, high-speed and line transformer drivers.PinoutSpecifications SYMBOL PAR...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
Per FET | |||||
VDS | drain-source voltage (DC) N-channel P-channel |
- - |
300 -300 |
V V | |
VGSO | gate-source voltage (DC) | - | ±20 | V | |
ID | drain current (DC) N-channel P-channel |
Ts 80 ; note 1 | - - |
340 -235 |
A A |
IDM | peak drain current N-channel P-channel |
note 2 | - - |
14 -0.9 |
A A |
Ptot | total power dissipation | Ts = 80 ; note 3 | - | 1.6 | W |
Tamb = 25 ; note 4 | - | 1.8 | W | ||
Tamb = 25 ; note 5 | - | 0.9 | W | ||
Tamb = 25 ; note 6 | - | 1.2 | W | ||
Tstg | storage temperature | -65 | +150 | ||
Tj | operating junction temperature | - | 150 |
PHC2300 One N-channel and one P-channel enhancement mode MOS transistor in an 8-pin plastic SOT96-1 (SO8) package.