Features: · Low on-state resistance· Fast switching.Application· High frequency computer motherboard DC to DC converters.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) Tj = 25 to 175 °C - 25 V VDGR drain-gate ...
PHB95N03LTA: Features: · Low on-state resistance· Fast switching.Application· High frequency computer motherboard DC to DC converters.PinoutSpecifications Symbol Parameter Conditions Min Max ...
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Features: ·Low on-state resistance·Fast switching.Application·High frequency computer motherboard ...
Features: ·Logic level threshold·Low on-state resistance.Application·Motors, lamps, solenoids·DC-t...
Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
VDS |
drain-source voltage (DC) | Tj = 25 to 175 °C |
- |
25 |
V |
VDGR |
drain-gate voltage (DC) | Tj = 25 to 175 °C; RGS = 20 k |
- |
25 |
V |
ID |
drain current (DC) | Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 |
- |
75 |
A |
Tmb = 100 °C; VGS = 10 V; Figure 2 |
- |
61 |
A | ||
VGS |
gate-source voltage |
- |
±20 |
V | |
IDM |
peak drain current | Tmb = 25 °C; pulsed; tp 10 s;Figure 3 |
- |
240 |
A |
Ptot |
total power dissipation | Tmb = 25 °C; Figure 1 |
- |
125 |
W |
Tstg |
storage temperature |
-55 |
+175 |
°C | |
Tj |
junction temperature |
-55 |
+175 |
°C | |
Source-drain diode | |||||
IS |
source (diode forward) current (DC) | Tmb = 25 °C |
- |
75 |
A |
ISM |
peak source (diode forward) current | Tmb = 25 °C; tp 10 s |
- |
240 |
A |
Avalanche ruggedness | |||||
EDS(AL)S |
non-repetitive drain-source avalanche energy | unclamped inductive load; ID = 75 A; tAL = 0.1 ms; VDD = 15 V; RGS = 50 ; VGS = 5V; starting Tj = 25 °C |
- |
120 |
mJ |
IDS(AL)S |
non-repetitive drain-source avalanche current |
unclamped inductive load; VDD = 15 V; RGS = 50 ; VGS = 5 V; starting Tj=25 °C |
- |
75 |
A |