Position: Home  > All Categories> Integrated Circuits (ICs) > PHB78NQ03LT

PHB78NQ03LT

Features: ·Low on-state resistance·Fast switchingApplication·Computer motherboards·DC to DC convertersPinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) Tj =25 to 175 - 25 V VDGR drain-gate voltage (DC) Tj =25 to 175 ; RGS = 20 k - ...

product image

PHB78NQ03LT Picture
See larger image
SeekIC No. : 004460400 Detail

PHB78NQ03LT: Features: ·Low on-state resistance·Fast switchingApplication·Computer motherboards·DC to DC convertersPinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source vol...

PHB78NQ03LT Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
PHB78NQ03LT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

·Low on-state resistance
·Fast switching


Application

·Computer motherboards
·DC to DC converters


Pinout

Connection Diagram


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) Tj =25 to 175 - 25 V
VDGR drain-gate voltage (DC) Tj =25 to 175 ; RGS = 20 k - 25 V
VGS gate-source voltage   - ±15 V
VGSM gate-source voltage TP 50 s; pulsed; duty cycle = 25%;Tj 150   ±20  
ID drain current (DC) Tmb = 25 ; VGS = 5 V; Figure 2 and 3 - 61 A
Tmb = 100 ; VGS = 5 V; Figure 2 - 43  
Tmb = 25 ; VGS =10 V - 75  
Tmb = 100 ; VGS =10 V - 53 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 228 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 93 W
Tstg storage temperature   -55 +175
Tj junction temperature   -55 +175
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 - 75 A
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s -

228

 A



Description

N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology.

Product availability:

PHP78NQ03LT in SOT78 (TO-220AB)

PHB78NQ03LT in SOT404 (D2-PAK)

PHD78NQ03LT in SOT428 (D-PAK).


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Optoelectronics
SFH7770
TLP423J
Test Equipment
TOP853
TOP2005
Integrated Circuits (ICs)
TA8435H
1MB12-140
View more