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PHB55N04LT

Features: • 'Trench' technology• Very low on-state resistance• Fast switching• Low thermal resistance• Logic level compatibleApplication• High frequency computer motherboard d.c. to d.c. converters• High current switchingPinoutSpecifications SYMBOL ...

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SeekIC No. : 004460385 Detail

PHB55N04LT: Features: • 'Trench' technology• Very low on-state resistance• Fast switching• Low thermal resistance• Logic level compatibleApplication• High frequency computer ...

PHB55N04LT Data Sheet

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Part Number:
PHB55N04LT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• 'Trench' technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance
• Logic level compatible


Application

• High frequency computer motherboard d.c. to d.c. converters
• High current switching


Pinout

Connection Diagram




Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MIN.
UNIT
VDS
 Repetitive peak drain-source voltage
Tj = 25 °C to 150°C
-
35
V
VDGR
 Drain-gate voltage
Tj = 25 °C to 175°C;RGS = 20 k
-
35
V
VGS
 Gate-source voltage
-
±15
V
VGSM
 Gate-source voltage (pulse peak value)
Tj 150°C
-
±20
V
ID
 Drain current (DC)
Tmb = 25 °C
-
55
A
Tmb = 100 °C
-
38
A
IDM
 Drain current per MOSFET (pulse peak value)
Tmb = 25 °C
-
220
A
Ptot
 Total power dissipation
Tmb = 25 °C
-
103
W
Tstg,Tj
 Storage & operating temperature
-55
175
°C



Description

PHB55N04LT, N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using 'trench' technology.




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