PHB50N06T Selling Leads, Price trend, PHB50N06T DataSheet download, circuit diagram from SeekIC.com

PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSVDGR±VGSIDIDIDMPtotTstg, Tj Drain-source voltageDrain-gate voltageGate-source voltageDrain current (DC)Drain current (DC)Drain current (pulse peak value)Total power dissipationStorage & operating temperature -RGS...

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SeekIC No. : 004460381 Detail

PHB50N06T: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSVDGR±VGSIDIDIDMPtotTstg, Tj Drain-source voltageDrain-gate voltageGate-source voltageDrain current (DC)Drain current ...

PHB50N06T Data Sheet

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Part Number:: PHB50N06T
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/25

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PHB50N03LT evaluate
Features: • 'Trench' technology• Very low on-state resistance• Fast switching...
PHB50N03T evaluate
PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSVDGR±VGSIDIDIDMPto...
PHB50N06LT evaluate
Features: • 'Trench' technology• Very low on-state resistance• Fast switching...

Product Details

Description

Pinout

Connection Diagram

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_DS V_DGR±V_GSI_DI_DI_DMP_totT_stg, T_j	Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature	- R_GS = 20 k - T_mb = 25 T_mb = 100 T_mb= 25 T_mb= 25 -	- - - - - - - - 55	55 55 20 50 35 200 125 175	V V V A A A W

Description

PHB50N06T N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using 'trench' technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. PHB50N06T is intended for use in DC-DC converters and general purpose switching applications.

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PHB50N06T

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