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PHB4ND40E

Features: • Repetitive Avalanche Rated• Fast switching• Stable off-state characteristics• High thermal cycling performance• Low thermal resistance• Fast reverse recovery diodePinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS Drai...

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SeekIC No. : 004460377 Detail

PHB4ND40E: Features: • Repetitive Avalanche Rated• Fast switching• Stable off-state characteristics• High thermal cycling performance• Low thermal resistance• Fast reverse r...

PHB4ND40E Data Sheet

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Part Number:
PHB4ND40E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
• Fast reverse recovery diode


Pinout

Connection Diagram




Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDSS Drain-source voltage Tj =25 to 175 - 400 V
VDGR Drain-gate voltage Tj =25 to 175 ; RGS = 20 k - 400 V
VGS Gate-source voltage   -- ±30 V
ID Continuous drain current Tmb = 25 ;VGS = 10 V   4.4 A
Tmb = 100 ;VGS = 10 V - 2.7 A
IDM Pulsed drain current Tmb = 25 - 18 A
PD Total power dissipation Tmb = 25 - 83 W
Tj, Tstg Operating junction and
storage temperature		   -55 150



Description

N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED). This gives improved switching performance in half bridge ansd full bridge converters making this PHB4ND40E device particularly suitable for inverters, lighting ballasts and motor control circuits.




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