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PHB45NQ15T

Features: ·Low on-state resistance·Low thermal resistance·Fast switching·Low gate charge.Application·DC-to-DC primary side switching·AC-to-DC secondary side rectification.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 Tj 175 - 15...

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SeekIC No. : 004460373 Detail

PHB45NQ15T: Features: ·Low on-state resistance·Low thermal resistance·Fast switching·Low gate charge.Application·DC-to-DC primary side switching·AC-to-DC secondary side rectification.PinoutSpecifications S...

PHB45NQ15T Data Sheet

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Part Number:
PHB45NQ15T
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

·Low on-state resistance
·Low thermal resistance
·Fast switching
·Low gate charge.


Application

·DC-to-DC primary side switching
·AC-to-DC secondary side rectification.


Pinout

  Connection Diagram


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25 Tj 175 - 150 V
VDGR drain-gate voltage (DC) 25 Tj 175 ; RGS = 20 k - 150 V
VGS gate-source voltage (DC)   - ±20 V
ID drain current (DC) Tmb = 25 ; VGS = 10 V; Figure 2 and 3 - 45.1 A
Tmb = 100 ; VGS = 10 V; Figure 2 - 31.9 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 90.2 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 230 W
Tstg storage temperature   -55 +175
Tj junction temperature   -55 +175
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 - 45.1 A
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s - 90.2 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy		 unclamped inductive load; ID = 19.1A;
tp = 0.1 ms; VDD 150 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 		- 180 mJ



Description

PHB45NQ15T Standard level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology.


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