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PHB45N03T

PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSVDGR±VGSIDIDIDMPtotTstg, Tj Drain-source voltageDrain-gate voltageGate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value)Total power dissipationStorage & operati...

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PHB45N03T: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSVDGR±VGSIDIDIDMPtotTstg, Tj Drain-source voltageDrain-gate voltageGate-source voltage Drain current (DC)...

PHB45N03T Data Sheet

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Part Number:
PHB45N03T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS
VDGR
±VGS
ID
ID
IDM
Ptot
Tstg, Tj		 Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature		 -
RGS = 20 k
-
Tmb = 25
Tmb = 100
Tmb = 25
Tmb = 25
-		 -
-
-
-
-
-
-
- 55		 30
30
20
45
36
180
86
175		 V
V
V
A
A
A
W



Description

N-channel enhancement mode standard level field-effect power transistor in a plastic suitable for surface mounting envelope using 'trench' technology. The PHB45N03T features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications. PINNING - SOT404




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