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PHB45N03LTA

Features: ·Low on-state resistance·Fast switching.Application·Computer motherboard high frequency DC to DC converters.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) Tj =25 to 175 - 25 V VDGR drain-gate voltage (DC) Tj =25 to 175 ...

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SeekIC No. : 004460370 Detail

PHB45N03LTA: Features: ·Low on-state resistance·Fast switching.Application·Computer motherboard high frequency DC to DC converters.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS ...

PHB45N03LTA Data Sheet

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Part Number:
PHB45N03LTA
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

·Low on-state resistance
·Fast switching.


Application

·Computer motherboard high frequency DC to DC converters.


Pinout

Connection Diagram




Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) Tj =25 to 175 - 25 V
VDGR drain-gate voltage (DC) Tj =25 to 175 ; RGS = 20 k - 25 V
VGS gate-source voltage   - ±15 V
VGSM gate-source voltage TP 50 s; pulsed; duty cycle = 25%;Tj 150   ±20  
ID drain current (DC) Tmb = 25 ; VGS = 5 V; Figure 2 and 3 - 40 A
Tmb = 100 ; VGS = 5 V; Figure 2 - 30 A
IDM peak drain current Tmb = 100 ; pulsed; tp 10 s; Figure 3 - 160 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 65 W
Tstg storage temperature   -55 +175
Tj junction temperature   -55 +175
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 - 40 A
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s - 160 A
Avalanche ruggedness
EAS non-repetitive avalanche energy unclamped inductive load; ID =40 A;
tp = 0.1 ms; VDD 15 V; RGS = 50 ;
VGS = 5 V; starting Tj = 25 		- 60 mJ



Description

N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology.

Product availability:

PHP45N03LTA in SOT78 (TO-220AB)

PHB45N03LTA in SOT404 (D2-PAK)

PHD45N03LTA in SOT428 (D-PAK).


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