Features: • 'Trench' technology• Very low on-state resistance• Fast switching• Stable off-state characteristics• High thermal cycling performance• Low thermal resistance• Surface mounting packagePinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN....
PHB45N03LT: Features: • 'Trench' technology• Very low on-state resistance• Fast switching• Stable off-state characteristics• High thermal cycling performance• Low thermal res...
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Features: • 'Trench' technology• Very low on-state resistance• Fast switching...
Features: • 'Trench' technology• Very low on-state resistance• Fast switching...
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDS VDGR ±VGS ID ID IDM Ptot Tstg, Tj |
Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature |
- RGS = 20 k - Tmb = 25 Tmb = 100 Tmb = 25 Tmb = 25 - |
- - - - - - - - 55 |
30 30 15 45 36 180 86 175 |
V V V A A A W |
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using 'trench' technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.
The PHB45N03LT is supplied in the SOT404 surface mounting package.