PHB45N03LT

Features: • 'Trench' technology• Very low on-state resistance• Fast switching• Stable off-state characteristics• High thermal cycling performance• Low thermal resistance• Surface mounting packagePinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN....

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PHB45N03LT Picture
SeekIC No. : 004460369 Detail

PHB45N03LT: Features: • 'Trench' technology• Very low on-state resistance• Fast switching• Stable off-state characteristics• High thermal cycling performance• Low thermal res...

floor Price/Ceiling Price

Part Number:
PHB45N03LT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/25

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Product Details

Description



Features:

• 'Trench' technology
• Very low on-state resistance
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
• Surface mounting package



Pinout

  Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS
VDGR
±VGS
ID
ID
IDM
Ptot
Tstg, Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
-
RGS = 20 k
-
Tmb = 25
Tmb = 100
Tmb = 25
Tmb = 25
-
-
-
-
-
-
-
-
- 55
30
30
15
45
36
180
86
175
V
V
V
A
A
A
W



Description

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using 'trench' technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.

The PHB45N03LT is supplied in the SOT404 surface mounting package.




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