PHB44N06T

PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSVDGR±VGSIDIDIDMPtotTstg, Tj Drain-source voltageDrain-gate voltageGate-source voltageDrain current (DC)Drain current (DC)Drain current (pulse peak value)Total power dissipationStorage & operating temperature -RGS...

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PHB44N06T Picture
SeekIC No. : 004460368 Detail

PHB44N06T: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSVDGR±VGSIDIDIDMPtotTstg, Tj Drain-source voltageDrain-gate voltageGate-source voltageDrain current (DC)Drain current ...

floor Price/Ceiling Price

Part Number:
PHB44N06T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Pinout

  Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS
VDGR
±VGS
ID
ID
IDM
Ptot
Tstg, Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
-
RGS = 20 k
-
Tmb = 25
Tmb = 100
Tmb = 25
Tmb = 25
-
-
-
-
-
-
-
-
- 55
55
55
20
44
31
176
114
175
V
V
V
A
A
A
W



Description

N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using 'trench' technology the PHB44N06T features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications.




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