PH9930L,115 Selling Leads, Price trend , NXP Semiconductors, PH9930L,115 DataSheet download, circuit diagram from SeekIC.com

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PH9930L,115: MOSFET PWR-MOS

PH9930L,115 Data Sheet

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Part Number:: PH9930L,115
Mfg:: NXP Semiconductors
Supply Ability:: 5000

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Upload time: 2024/11/21

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	30 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	63 A
Resistance Drain-Source RDS (on) :	0.0099 Ohms	Configuration :	Single Triple Source
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	LFPAK	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Package / Case : LFPAK
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 63 A
Configuration : Single Triple Source
Resistance Drain-Source RDS (on) : 0.0099 Ohms

Parameters:

Technical/Catalog Information	PH9930L,115
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	63A
Rds On (Max) @ Id, Vgs	9.9 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	1565pF @ 12V
Power - Max	62.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	13.3nC @ 4.5V
Package / Case	LFPak-4
FET Feature	Logic Level Gate
Drawing Number	568; SOT669; ; 4
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PH9930L,115 PH9930L,115

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