PH965C6

The PH965C6 is designed as one kind of fuji silicon diodes. This diode is a product which optimzes the diode characteristic for the PFC circuit. This product is a product by which the trr characteristic is valued more than VF through there is a relation of the trade-off up to VF and trr. The total loss of the PFC circuit can be suppressed by shortening trr.

Some absolute maximum ratings of PH965C6 have been concluded into several points as follow. (1)Its repetitive peak reverse voltage would be 600V. (2)Its non-repetitive peak reverse voltage would be 600V. (3)Its surge peak forward current would be 30A. (4)Its peak forward current would be 20A. (5)Its average output current would be 7A with conditions of square wave duty=1/2 and Tc=107°C. (6)Its non-repetitive surge current would be 25A. (7)Its operating junction temperature range would be from -40°C to 150°C. (8)Its storage temperature range would be from -40°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics and mechanical characteristics of PH965C6 are concluded as follow. (1)Its reverse recovery peak current would be typ 2.0A with conditions of If=5A and -di/dt=200A/us, Vr=380V and Tj=100°C. (2)Its reverse recovery time would be max 25ns with conditions of If=0.1A and Ir=0.2A and Irec=0.05A. (3)Its forward voltage would be max 5.0V with conditions of If=10A. (4)Its reverse current would be max 50uA with conditions of Vr=Vrrm. (5)Its thermal resistance would be 2.2°C/W with conditions of junction to case. (6)Its mounting torque would be 0.4 to 0.6Nm. (7)Its approximate mass would be 4.9g. And so on. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information  about PH965C6 please contact us for details. Thank you!