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PH955L,115

MOSFET TRENCH-3

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SeekIC No. : 00163332 Detail

PH955L,115: MOSFET TRENCH-3

PH955L,115 Data Sheet

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Part Number:
PH955L,115
Mfg:
NXP Semiconductors
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 62.5 A
Resistance Drain-Source RDS (on) : 0.0083 Ohms Configuration : Single Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-669 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 55 V
Configuration : Single Triple Source
Package / Case : SOT-669
Resistance Drain-Source RDS (on) : 0.0083 Ohms
Continuous Drain Current : 62.5 A


Parameters:

Technical/Catalog InformationPH955L,115
VendorNXP Semiconductors
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C62.5A
Rds On (Max) @ Id, Vgs8.3 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 2836pF @ 25V
Power - Max62.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs42nC @ 5V
Package / CaseLFPak-4
FET FeatureLogic Level Gate
Drawing Number568; SOT669; ; 4
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PH955L,115
PH955L,115



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