PH8030L,115, US $ .62-.74 , NXP Semiconductors, PH8030L,115 DataSheet download, circuit diagram from SeekIC.com

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PH8030L,115: MOSFET TRENCH-3

PH8030L,115 Data Sheet

US $ .62~.74 / Piece | Get Latest Price

Part Number:: PH8030L,115
Mfg:: NXP Semiconductors
Supply Ability:: 5000

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Upload time: 2024/12/21

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Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	30 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	76.7 A
Resistance Drain-Source RDS (on) :	0.0059 Ohms	Configuration :	Single Triple Source
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-669	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Triple Source
Package / Case : SOT-669
Resistance Drain-Source RDS (on) : 0.0059 Ohms
Continuous Drain Current : 76.7 A

Parameters:

Technical/Catalog Information	PH8030L,115
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	76.7A
Rds On (Max) @ Id, Vgs	5.9 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	2260pF @ 12V
Power - Max	62.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	15.2nC @ 4.5V
Package / Case	LFPak-4
FET Feature	Logic Level Gate
Drawing Number	568; SOT669; ; 4
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PH8030L,115 PH8030L,115

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