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PH6325L

Features: ·Optimized for use in DC-to-DC converters·Low threshold voltage·Very low switching and conduction losses·Low thermal resistance.Application·DC-to-DC converters·Voltage regulators·Switched-mode power supplies·Notebook computers.PinoutSpecifications Symbol Parameter Conditions Min ...

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SeekIC No. : 004460292 Detail

PH6325L: Features: ·Optimized for use in DC-to-DC converters·Low threshold voltage·Very low switching and conduction losses·Low thermal resistance.Application·DC-to-DC converters·Voltage regulators·Switched-...

PH6325L Data Sheet

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Part Number:
PH6325L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

·Optimized for use in DC-to-DC converters
·Low threshold voltage
·Very low switching and conduction losses
·Low thermal resistance.


Application

·DC-to-DC converters
·Voltage regulators
·Switched-mode power supplies
·Notebook computers.


Pinout

Connection Diagram


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25 Tj 150 - 25 V
VGS gate-source voltage   - ±20 V
ID drain current (DC) Tmb = 25 ; VGS = 10 V; Figure 2 and 3 - 78.7 A
Tmb = 100 ; VGS = 10 V; Figure 2 - 49.6 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 236 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 62.5 W
Tstg storage temperature   -55 +150
Tj junction temperature   -55 +150
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 - 52 A
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s - 208 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy		 unclamped inductive load; ID = 34 A;tp = 0.15 ms; VDD = 25 V; RGS = 50 ;
VGS = 10 V;starting Tj = 25 		- 115 mJ
EDS(AL)R repetitive drain-source avalanche
energy		 unclamped inductive load; ID = 34 A;tp = 0.15 ms; VDD = 25 V; RGS = 50 ;
VGS = 10 V;starting Tj = 25 		- 1.2 mJ



Description

PH6325L Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.


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