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PH5525L,115

MOSFET TRENCH G4- TAPE 7

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SeekIC No. : 00162293 Detail

PH5525L,115: MOSFET TRENCH G4- TAPE 7

PH5525L,115 Data Sheet

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Part Number:
PH5525L,115
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 81.7 A
Resistance Drain-Source RDS (on) : 0.0055 Ohms Configuration : Single Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : LFPAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : LFPAK
Maximum Operating Temperature : + 150 C
Configuration : Single Triple Source
Resistance Drain-Source RDS (on) : 0.0055 Ohms
Continuous Drain Current : 81.7 A


Parameters:

Technical/Catalog InformationPH5525L,115
VendorNXP Semiconductors
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C81.7A
Rds On (Max) @ Id, Vgs5.5 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 2150pF @ 12V
Power - Max62.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs16.6nC @ 4.5V
Package / CaseLFPak-4
FET FeatureLogic Level Gate
Drawing Number568; SOT669; ; 4
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PH5525L,115
PH5525L,115



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