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PH4830L,115

MOSFET PWR-MOS

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SeekIC No. : 00163262 Detail

PH4830L,115: MOSFET PWR-MOS

PH4830L,115 Data Sheet

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Part Number:
PH4830L,115
Mfg:
NXP Semiconductors
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 84 A
Resistance Drain-Source RDS (on) : 4.8 mOhms Configuration : Single Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-669 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 84 A
Configuration : Single Triple Source
Resistance Drain-Source RDS (on) : 4.8 mOhms
Package / Case : SOT-669


Parameters:

Technical/Catalog InformationPH4830L,115
VendorNXP Semiconductors
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C84A
Rds On (Max) @ Id, Vgs4.8 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 2786pF @ 12V
Power - Max62.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs22.9nC @ 4.5V
Package / CaseLFPak-4
FET FeatureLogic Level Gate
Drawing Number568; SOT669; ; 4
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PH4830L,115
PH4830L,115



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