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PH31355M

Features: ·NPN Silicon Microwave Power Transistor·Common Base Configuration·Broadband Class C Operation·High Efficiency Interdigitated Geometry·Diffused Emitter Ballasting Resistors·Gold Metalization System·Internal Input and Output Impedance Matching·Hermetic Metal/Ceramic PackageSpecifications ...

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SeekIC No. : 004460272 Detail

PH31355M: Features: ·NPN Silicon Microwave Power Transistor·Common Base Configuration·Broadband Class C Operation·High Efficiency Interdigitated Geometry·Diffused Emitter Ballasting Resistors·Gold Metalizatio...

PH31355M Data Sheet

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Part Number:
PH31355M
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

·NPN Silicon Microwave Power Transistor
·Common Base Configuration
·Broadband Class C Operation
·High Efficiency Interdigitated Geometry
·Diffused Emitter Ballasting Resistors
·Gold Metalization System
·Internal Input and Output Impedance Matching
·Hermetic Metal/Ceramic Package


Specifications

Parameter Symbol Rating Units
Collector-Emitter Voltage VCES 65 V
Emitter-Base Voltage VEBO 3.0 V
Collector Current (Peak) IC 0.75 A
Total Power Dissipation PTOT 50 W
Junction Temperature Tj 200
Storage Temperature
 Tstg -65 to +200



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