MOSFET N-CH TRENCH 25V
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Features: ·NPN Silicon Microwave Power Transistor·Common Base Configuration·Broadband Class C Oper...
Features: `NPN Silicon Power Transistor`Common Base Configuration`Broadband Class C Operation`High...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 25 V | ||
Gate-Source Breakdown Voltage : | +/- 10 V | Continuous Drain Current : | 100 A | ||
Resistance Drain-Source RDS (on) : | 0.003 Ohms | Configuration : | Single Triple Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-669 | Packaging : | Reel |
Technical/Catalog Information | PH2925U,115 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25° C | 100A |
Rds On (Max) @ Id, Vgs | 3 mOhm @ 25A, 4.5V |
Input Capacitance (Ciss) @ Vds | 6150pF @ 10V |
Power - Max | 62.5W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 92nC @ 4.5V |
Package / Case | LFPak-4 |
FET Feature | Standard |
Drawing Number | 568; SOT669; ; 4 |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | PH2925U,115 PH2925U,115 568 2344 2 ND 56823442ND 568-2344-2 |