PH2735-5CE

PH2735-5CE is a type of linear power transistor which has many unique features: The first one is NPN silicon Microwave power transistor. The second one is common emitter configuration. The third one is it is class AB operation. The forth one is it is designed for linear amplifier applications. The fifth one is diffused emitter ballasting resistors. The sixth one is gold matallization system. The seventh one is Hermatic metal/ceramic package.The eighth one is internal input and output impedance matching.
 
There are some absolute maximum ratings about PH2735-5CE.Collector-emitter votlage(V_CES) is 60 V.Collector-emitter voltage(V_CES) is 60 V. Emitter-base current(I_EBO) is 3.0 A.Collector current(peak)(Ic) is 2.0 A. Power dissipation(Ptot) is 20 W.Junction temperature(Tj) is 200. Storage temperature(Tstg) is -65 to +200Thermal resistance is 8/W.Otherwise, there are some electrical characteristics. Collector-emitter breakdwon voltage(BV_CES) is 60 V min when Ic is 5 mA. Collector-emitter leakage current(I_CES) is 1.0 mA max when V_CE is 25.0 V.Collector-emitter breakdwon voltage(BV_CEO) is 20 V min when Ic is 5 mA. Collector-emitter breakdown voltage(BV_CER) is 30 V min when I_C is 5 mA and R_BE is 220 ohms. Emitter-base breakdown voltage(BV_EBO) is 3.0 V when I_B is 5.0 mA. DC forward current gain is 15 min and 120 typ when V_CE is 5.0 V and Ic is 0.1 A.

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