Features: ·NPM Silicon Microwave Power Transistor·Common Base Configuration·Broadband Class C Operation·High Efficiency Interdigitated Geometry·Diffused Emitter Ballasting Resistors·Gold Metalization System·Internal Input and Output Impedance Matching·Hermetic MtxaKeramic PackageSpecifications ...
PH2729-8SM: Features: ·NPM Silicon Microwave Power Transistor·Common Base Configuration·Broadband Class C Operation·High Efficiency Interdigitated Geometry·Diffused Emitter Ballasting Resistors·Gold Metalizatio...
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Features: ·NPN Silicon Microwave Power Transistor·Common Base Configuration·Broadband Class C Oper...
Parameter | Symbol | Rating | Units |
Collector-Emitter Voltage | VCES | 65 | V |
Emitter-Base Voltage | VEBO | 3.0 | V |
Collector Current (Peak) | IC | 1.8 | A |
Total Power Dissipation | PTOT | 65 | W |
Junction Temperature | Tj | 200 | |
Storage Temperature |
Tstg | -65 to +200 |