PH2729-8.5M

PH2729-8.5M is a type of radar pulsed power transistor which has many unique features: The first one is NPN silicon Microwave power transistor. The second one is common base configuration. The third one is it is broadband class C operation. The forth one is high efficiency interdigitated Geometry. The fifth one is diffused emitter ballasting resistors. The sixth one is gold matallization system. The seventh one is Hermatic metal/ceramic package.The eighth one is internal input and output impedance matching.
 
There are some absolute maximum ratings about PH2729-8.5M.Collector-emitter votlage(V_CES) is 65 V. Emitter-base voltage(V_EBO) is 3.0 V.Collector current(peak)(Ic) is 1.8 A.Total Power dissipation(Ptot) is 65 W.Junction temperature(Tj) is 200. Storage temperature(Tstg) is -65 to +200.Otherwise, there are some electrical characteristics. Collector-emitter breakdwon voltage(BV_CES) is 65 V min when Ic is 10 mA. Collector-emitter leakage current(I_CES) is 1.5 mA max when VCE is 40 V.Output Power (Pout) is 8.5 W min when Vcc is 36 V, F is 2.7,2.8,2.9GHz,Pin is 1.3 W. Collector efficiency is 35% min when Vcc is 36 V, F is 2.7,2.8,2.9 GHz,Pin is 1.3 W.

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