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PH2729-150M

Features: • NPN Silicon Microwave Power Transistor• Common Base Configuration• Broadband Class C Operation• High Efficiency Interdigitated Geometry• Diffused Emitter Ballasting Resistors• Gold Metallization System• Internal Input and Output Impedance Match...

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SeekIC No. : 004460233 Detail

PH2729-150M: Features: • NPN Silicon Microwave Power Transistor• Common Base Configuration• Broadband Class C Operation• High Efficiency Interdigitated Geometry• Diffused Emitter Ba...

PH2729-150M Data Sheet

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Part Number:
PH2729-150M
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• NPN Silicon Microwave Power Transistor
• Common Base Configuration
• Broadband Class C Operation
• High Efficiency Interdigitated Geometry
• Diffused Emitter Ballasting Resistors
• Gold Metallization System
• Internal Input and Output Impedance Matching
• Hermetic Metal/Ceramic Package


Specifications

Parameter Symbol Rating Units
Collector-Emitter Voltage VCES 65 V
Emitter-Base Voltage VEBO 3.0 V
Collector Current (Peak) IC 15.0 A
Power Dissipation PD 500 W
Storage Temperature
 Tstg -65 to +200
Junction Temperature Tj 200



Description

M/A-COM's PH2729-150M is a silicon bipolar NPN transistor specifically designed for use in high efficiency, common base, Class C microwave power amplifiers. It is ideally suited for SBand radar and pulsed power applications where the highest gain and saturated power are required. The flanged ceramic package provides for excellent thermal and hermetic properties, which when combined with M/A-COM's mature transistor fabrication technology results in the highest reliability available.




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