PH2729-120M

PH2729-120M is a type of radar pulsed power transistor which has many unique features: the first one is NPN silicon Microwave power transistor. The second one is common emitter configuration. The third one is it is broadband class C operation. The forth one is new power dense interdigitated Geometry. The fifth one is diffused emitter ballasting resistors. The sixth one is gold matallization system. The seventh one is Hermatic metal/ceramic package.
 
There are some absolute maximum ratings about PH2729-120M.Collector-emitter votlage(V_CES) is 63 V. Emitter-base voltage(V_EBO) is 3.0 V.Collector current(peak)(Ic) is 12.5 A.Junction temperature(Tj) is 200. Storage temperature(Tstg) is  -65 to +200.Otherwise, there are some electrical characteristics. Collector-emitter breakdwon voltage(BV_CES) is 63 V min when Ic is 40 mA. Collector-emitter leakage current(I_CES) is 7.5 mA max when V_CE is 36 V.Output Power (Pout) is 120 W min when Vcc is 36 V, F is 2.7,2.9GHz,Pin is 24 W. Collector efficiency is 40% min when  Vcc is 36 V, F is 2.7,2.9GHz,Pin is 24 W.

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