MOSFET N-CH TRENCH 25V
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 25 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.1 A | ||
Resistance Drain-Source RDS (on) : | 0.0028 Ohms | Configuration : | Single Triple Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-669 | Packaging : | Reel |
Technical/Catalog Information | PH2625L,115 |
Vendor | NXP Semiconductors (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25° C | 100A |
Rds On (Max) @ Id, Vgs | 2.8 mOhm @ 25A, 10V |
Input Capacitance (Ciss) @ Vds | 4308pF @ 12V |
Power - Max | 62.5W |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 32nC @ 4.5V |
Package / Case | LFPak-4 |
FET Feature | Logic Level Gate |
Drawing Number | 568; SOT669; ; 4 |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | PH2625L,115 PH2625L,115 568 2177 1 ND 56821771ND 568-2177-1 |