Features: ·Low thermal resistance ·SO8 equivalent area footprint·Low threshold voltage ·Low on-state resistance.Application·DC-to-DC converters ·Switched-mode power supplies·Portable appliances ·Notebook computers.PinoutSpecifications Symbol Parameter Conditions Min Max Unit ...
PH2520U: Features: ·Low thermal resistance ·SO8 equivalent area footprint·Low threshold voltage ·Low on-state resistance.Application·DC-to-DC converters ·Switched-mode power supplies·Portable appliances ·Not...
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Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
VDS |
drain-source voltage (DC) |
25 °C Tj 150 °C |
20 |
V | |
VGS |
gate-source voltage (DC) |
±10 |
V | ||
ID |
drain current (DC) |
Tmb = 25 °C; VGS = 4.5 V Figure 2 and 3 |
121 |
A | |
Tmb = 100 °C; VGS = 4.5 V Figure 2 |
76 |
A | |||
IDM |
peak drain current |
Tmb = 25 °C; pulsed; tp 10 ms Figure 3 |
360 |
A | |
Ptot |
total power dissipation |
Tmb = 25 °C Figure 1 |
62.5 |
W | |
Tstg |
storage temperature |
-55 |
+150 |
°C | |
Tj |
junction temperature |
-55 |
+150 |
°C | |
Source-drain diode | |||||
IS |
source (diode forward) current (DC) |
Tmb = 25 °C |
52 |
A | |
ISM |
peak source (diode forward) current |
Tmb = 25 °C; pulsed; tp 10 ms |
150 |
A | |
Avalanche ruggedness | |||||
EDS(AL)S |
non-repetitive drain-source avalanche energy |
unclamped inductive load; ID = 70.7 A; tp = 0.1 ms; VDD = 20 V; VGS = 10 V; starting Tj = 25 °C |
250 |
mJ |