PH2520U

Features: ·Low thermal resistance ·SO8 equivalent area footprint·Low threshold voltage ·Low on-state resistance.Application·DC-to-DC converters ·Switched-mode power supplies·Portable appliances ·Notebook computers.PinoutSpecifications Symbol Parameter Conditions Min Max Unit ...

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PH2520U Picture
SeekIC No. : 004460226 Detail

PH2520U: Features: ·Low thermal resistance ·SO8 equivalent area footprint·Low threshold voltage ·Low on-state resistance.Application·DC-to-DC converters ·Switched-mode power supplies·Portable appliances ·Not...

floor Price/Ceiling Price

Part Number:
PH2520U
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

·Low thermal resistance
·SO8 equivalent area footprint
·Low threshold voltage
·Low on-state resistance.



Application

·DC-to-DC converters
·Switched-mode power supplies
·Portable appliances
·Notebook computers.



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
25 °C Tj 150 °C
20
V
VGS
gate-source voltage (DC)
±10
V
ID
drain current (DC)
Tmb = 25 °C; VGS = 4.5 V Figure 2 and 3
121
A
Tmb = 100 °C; VGS = 4.5 V Figure 2
76
A
IDM
peak drain current
Tmb = 25 °C; pulsed; tp 10 ms Figure 3
360
A
Ptot
total power dissipation
Tmb = 25 °C Figure 1
62.5
W
Tstg
storage temperature
-55
+150
°C
Tj
junction temperature
-55
+150
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tmb = 25 °C
52
A
ISM
peak source (diode forward) current
Tmb = 25 °C; pulsed; tp 10 ms
150
A
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
unclamped inductive load; ID = 70.7 A;
tp = 0.1 ms; VDD = 20 V; VGS = 10 V;
starting Tj = 25 °C
250
mJ



Description

PH2520U, N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology.


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