PH2323-6

PH2323-6 is a type of CW power transistor which has many unique features: the first one is NPN silicon Microwave power transistor. The second one is common emitter configuration. The third one is it is class C operation. The forth one is interdigitated Geometry. The fifth one is diffused emitter ballasting resistors. The sixth one is gold matallization system. The seventh one is Hermatic metal/ceramic package.
 
There are some absolute maximum ratings about PH2323-6.Collector-emitter votlage(V_CES) is 60 V. Emitter-base voltage(V_EBO) is 3.0 V.Collector current(Ic) is 0.8 A.Junction temperature(Tj) is 200. Storage temperature(Tstg) is  -65 to +200.Otherwise, there are some electrical characteristics. Collector-emitter breakdwon voltage(BV_CES) is 60 V min when Ic is 10 mA. Collector-emitter leakage current(I_CES) is 2.0 mA max when V_CE is 28 V.Output Power (Pout) is 6.0 W min when Vcc is 28 V, F is 2.3GHz,Pin is 0.76 W. Collector efficiency is 40% min when Vcc is 28 V,Pin is 4.0 W and F is 2.3 GHz.

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