PH2323-4

PH2323-4 is a type of CW biploar power transistor which has many unique features: the first one is NPN silicon Microwave power transistor. The second one is common emitter configuration. The third one is it is class C operation. The forth one is interdigitated Geometry. The fifth one is diffused emitter ballasting resistors. The sixth one is gold matallization system. The seventh one is Hermatic metal/ceramic package.
 
There are some absolute maximum ratings about PH2323-4.Collector-emitter votlage(V_CES) is 60 V. Collector current(Ic) is 0.6 A.Junction temperature(Tj) is 200. Storage temperature(Tstg) is  +200.Emitter-base voltage(V_EBO) is 3.0 V.Otherwise, there are some electrical characteristics. Collector-emitter breakdwon voltage(BV_CES) is 60 V min when Ic is 7.5 mA. Collector-emitter leakage current(I_CES) is 1.5 mA max when V_CE is 28 V.Input Power (Pin) is 0.63 W min when Vcc is 28 V, F is 2.3GHz,Pout is 4.0 W. Collector efficiency is 353% min when Vcc is 28 V,Pout is 4.0 W and F is 2.0 GHz.

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