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PH1819-4N

Features: ·NPN Silicon Microwave Power Transistor·Designed for Linear Amplifier Applications·Class AB: -34 dBc Typ 3rd IMD at 4 Watts PEP·Class A: +44 dBm Typ 3rd Order Intercept Point ·Common Emitter Configuration·Internal Input Impedance Matching·Diffused Emitter Ballasting·Gold Metallization Sy...

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SeekIC No. : 004460200 Detail

PH1819-4N: Features: ·NPN Silicon Microwave Power Transistor·Designed for Linear Amplifier Applications·Class AB: -34 dBc Typ 3rd IMD at 4 Watts PEP·Class A: +44 dBm Typ 3rd Order Intercept Point ·Common Emitt...

PH1819-4N Data Sheet

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Part Number:
PH1819-4N
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

·NPN Silicon Microwave Power Transistor
·Designed for Linear Amplifier Applications
·Class AB: -34 dBc Typ 3rd IMD at 4 Watts PEP
·Class A: +44 dBm Typ 3rd Order Intercept Point
·Common Emitter Configuration
·Internal Input Impedance Matching
·Diffused Emitter Ballasting
·Gold Metallization System


Specifications

Parameter Symbol Rating Units
Collector-Base Voltage VCEO 60 V
Collector-Emitter Voltage VCES 60 V
Emitter-Base Voltage VEBO 3.0 V
Collector Current IC 0.7 A
Power Dissipation PD 19.5 W
Junction Temperature TJ 200
Storage Temperature T STG -55 to +150
Thermal Resistance jc 1.0 /W



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