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PH1819-45A

Features: • NPN Silicon Microwave Power Transistor• -28 dBc Typical 3rd IMD at 45 Watts PEP• Common Emitter Class AB Operation• Internal Input and Output Impedance Matching• Diffused Emitter Ballasting• Gold Metalization SystemSpecifications Parameter Symb...

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PH1819-45A: Features: • NPN Silicon Microwave Power Transistor• -28 dBc Typical 3rd IMD at 45 Watts PEP• Common Emitter Class AB Operation• Internal Input and Output Impedance Matching&#...

PH1819-45A Data Sheet

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Part Number:
PH1819-45A
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• NPN Silicon Microwave Power Transistor
• -28 dBc Typical 3rd IMD at 45 Watts PEP
• Common Emitter Class AB Operation
• Internal Input and Output Impedance Matching
• Diffused Emitter Ballasting
• Gold Metalization System


Specifications

Parameter Symbol Rating Units
Collector-Base Voltage VCEO 20 V
Collector-Emitter Voltage VCES 65 V
Emitter-Base Voltage VEBO 3.0 V
Collector Current IC 4.0 A
Power Dissipation PD 117 W
Storage Temperature Tstg -50 to +150
Junction Temperature TJ 200
Thermal Resistance jc 1.5 /W



Description

M/A-COM's PH11819-45A is a high efficiency silicon bipolar NPN transistor intended for use as a common emitter class AB stage in power amplifiers that operate in the 1805 to 1880 MHz range. This transistor features internal input and output impedance matching, diffused emitter ballasting and gold metalization. The PH1819-45A is packaged in a low cost, non-hermetic ceramic package which has a very low thermal impedance.




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