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PH1617-60

Features: • NPN Silicon Microwave Power Transistor• Common Emitter Configuration• Diffused Emitter Ballasting Resistors• Gold Metalization System• Internal Input and Output Impedance Matching• -28 dBc Typical IMD at 60 Watts PEPSpecifications Parameter Sym...

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SeekIC No. : 004460195 Detail

PH1617-60: Features: • NPN Silicon Microwave Power Transistor• Common Emitter Configuration• Diffused Emitter Ballasting Resistors• Gold Metalization System• Internal Input and Ou...

PH1617-60 Data Sheet

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Part Number:
PH1617-60
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• NPN Silicon Microwave Power Transistor
• Common Emitter Configuration
• Diffused Emitter Ballasting Resistors
• Gold Metalization System
• Internal Input and Output Impedance Matching
• -28 dBc Typical IMD at 60 Watts PEP


Specifications

Parameter Symbol Rating Units
Collector-Base Voltage VCEO 20 V
Collector-Emitter Voltage VCES 65 V
Emitter-Base Voltage VEBO 3.0 V
Collector Current IC 5.8 A
Power Dissipation PD 150 W
Storage Temperature Tstg -50 to +150
Junction Temperature TJ 200
Thermal Resistance jc 1.0 /W



Description

M/A-COM's PH1617-60 is a silicon bipolar NPN transistor intended for use as a common emitter class AB stage in power amplifiers that operate in the 1615 to 1685 MHz range. This transistor features internal input and output impedance matching, diffused emitter ballasting and gold metalization.

The PH1617-60 is packaged in a low cost, non-hermetic ceramic package which has very low thermal impedance.




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