Features: `NPN Silicon Microwave Power Transistor`Common Base Configuration`Broadband Class C Operation`Interdigitated Geometry`Diffused Emitter Ballasting Resistors`Gold Metalization System`Internal Input Impedance Matching`Hermetic'NletalKeramic PackageSpecifications Parameter Symbol Rati...
PH1214-6M: Features: `NPN Silicon Microwave Power Transistor`Common Base Configuration`Broadband Class C Operation`Interdigitated Geometry`Diffused Emitter Ballasting Resistors`Gold Metalization System`Interna...
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Parameter | Symbol | Rating | Units |
Collector-Emitter Voltage | VCES | 65 | V |
Emitter-Base Voltage | VEBO | 3.0 | V |
Collector Current (Peak) | IC | 1.3 | A |
Total Power Dissipation | PTOT | 25 | W |
Junction Temperature | Tj | 200 | |
Storage Temperature |
Tstg | -65 to +200 |