Features: ·NPN Silicon Microwave Power Transistor·Common Base Configuration·Broadband Class C Operation·Interdigitated Geometry·Diffused Emitter Ballasting Resistors·Gold Metalization System·Internal Input Impedance Matching·Hermetic Metal/Ceramic PackageSpecifications Parameter Symbol Rati...
PH1214-4M: Features: ·NPN Silicon Microwave Power Transistor·Common Base Configuration·Broadband Class C Operation·Interdigitated Geometry·Diffused Emitter Ballasting Resistors·Gold Metalization System·Interna...
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Parameter | Symbol | Rating | Units |
Collector-Emitter Voltage | VCES | 65 | V |
Emitter-Base Voltage | VEBO | 3.0 | V |
Collector Current (Peak) | IC | 875 | mA |
Total Power Dissipation | PD | 17 | W |
Junction Temperature | Tj | 200 | |
Storage Temperature | TSTG | -65 to +200 |