Features: • NPN Silicon Microwave Power Transistor• Common Base Configuration• Broadband Class C Operation• High Efficiency Interdigitated Geometry• Diffused Emitter Ballasting Resistors• Gold Metalization System• Internal Input and Output Impedance Matchi...
PH1214-40M: Features: • NPN Silicon Microwave Power Transistor• Common Base Configuration• Broadband Class C Operation• High Efficiency Interdigitated Geometry• Diffused Emitter Ba...
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Parameter | Symbol | Rating | Units |
Collector-Emitter Voltage | VCES | 70 | V |
Emitter-Base Voltage | VEBO | 3.0 | V |
Collector Current (Peak) | IC | 3.0 | A |
Total Power Dissipation @ +25 | PTOT | 88 | W |
Storage Temperature |
Tstg | -65 to +200 | |
Junction Temperature | Tj | 200 |
M/A-COM's PH1214-40M is a silicon bipolar NPN power transistor intended for use in L-band, 1.2 - 1.4 GHz pulsed radars such as air traffic control and long-range weather radars. Designed for common-base, class C, broadband pulsed power applications, the PH1214-40M can produce 40 watts of output power with medium pulse-length (150µS) at 10 percent duty cycle. The transistor is housed in a 2-lead, rectangular metalceramic flange package, with internal input and output impedance matching networks. Diffused emitter ballast resistors and gold metalization assures ruggedness and long-term reliability.