Features: ·NPN Silicon Microwave Power Transistor·Common Base Configuration·Broadband Class C Operation·High Efficiency Interdigitated Geometry·Gold Metalization System·Internal Input and Output Impedance Matching·Hermetic Metal/Ceramic PackageSpecifications Parameter Symbol Rating Units ...
PH1214-300M: Features: ·NPN Silicon Microwave Power Transistor·Common Base Configuration·Broadband Class C Operation·High Efficiency Interdigitated Geometry·Gold Metalization System·Internal Input and Output Imp...
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Parameter | Symbol | Rating | Units |
Collector-Emitter Voltage | VCES | 90 | V |
Emitter-Base Voltage | VEBO | 3.0 | V |
Collector Current (Peak) | IC |
21.0 |
A |
Total Power Dissipation @ +45 | PTOT | 620 | W |
Storage Temperature |
Tstg | -65 to +200 | |
Junction Temperature | Tj | 200 |