PH1214-12M Selling Leads, Price trend, PH1214-12M DataSheet download, circuit diagram from SeekIC.com

Features: • NPN Silicon Microwave Power Transistor• Common Base Configuration• Broadband Class C Operation• High Efficiency Interdigitated Geometry• Diffused Emitter Ballasting Resistors• Gold Metalization System• Internal Input and Output Impedance Matchi...

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SeekIC No. : 004460176 Detail

PH1214-12M: Features: • NPN Silicon Microwave Power Transistor• Common Base Configuration• Broadband Class C Operation• High Efficiency Interdigitated Geometry• Diffused Emitter Ba...

PH1214-12M Data Sheet

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Part Number:: PH1214-12M
Supply Ability:: 5000

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Upload time: 2024/11/25

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Product Details

Description

Features:

• NPN Silicon Microwave Power Transistor
• Common Base Configuration
• Broadband Class C Operation
• High Efficiency Interdigitated Geometry
• Diffused Emitter Ballasting Resistors
• Gold Metalization System
• Internal Input and Output Impedance Matching
• Hermetic Metal/Ceramic Package

Specifications

Parameter	Symbol	Rating	Units
Collector-Emitter Voltage	V_CES	60	V
Emitter-Base Voltage	V_EBO	3.0	V
Collector Current (Peak)	I_C	1.3	A
Total Power Dissipation @ +25	P_TOT	40	W
Storage Temperature	T_stg	-65 to +200
Junction Temperature	T_j	200

Description

M/A-COM's PH1214-12M is a silicon bipolar NPN power transistor intended for use in L-band 1.2 - 1.4 GHz pulsed radar's such as air traffic control and long-range weather radars. Designed for common-base, class C, broadband pulsed power applications, the PH1214-12M can produce 12 watts of output power with medium pulse length (150S) at 10 percent duty cycle. The transistor is housed in a 2-lead, rectangular metalceramic flange package, with internal input and output impedance matching networks. Diffused emitter ballast resistors and gold metalization assure ruggedness and long-term reliability.

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