Features: ·NPN Silicon Microwave Power Transistor ·Common Base Configuration ·Broadband Class C Operation ·Diffused Emitter Ballasting Resistors ·Gold Metalization System ·Internal Input and Output Impedance Matching ·Hermetic ...
PH110M: Features: ·NPN Silicon Microwave Power Transistor ·Common Base Configuration ·Broadband Class C Operation ·Diffused Emitter Ballasting Resistors ·G...
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Parameter |
Symbol |
Rating |
Units |
Collector-Emitter Voltage |
VCES |
63 |
V |
Emitter-Base Voltage |
VEBO |
1.0 |
V |
Collector Current (Peak |
IC |
15 |
A |
Total Power Dissipation @ +45 °C |
PTOT |
583 |
W |
Storage Temperature |
TSTG |
-65 to +200 |
°C |
Junction Temperature |
Tj |
200 |
°C |