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PH1090-700B

Features: ·Designed for Mode-S IFF Applications·NPN Silicon Microwave Power Transistor·Common Base Configuration·Broadband Class C Operation·High Efficiency Interdigitated Geometry·Gold Metalization System·Internal Input and Output Impedance Matching·Hermetic Metal/Ceramic PackageSpecifications ...

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PH1090-700B: Features: ·Designed for Mode-S IFF Applications·NPN Silicon Microwave Power Transistor·Common Base Configuration·Broadband Class C Operation·High Efficiency Interdigitated Geometry·Gold Metalization...

PH1090-700B Data Sheet

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Part Number:
PH1090-700B
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

·Designed for Mode-S IFF Applications
·NPN Silicon Microwave Power Transistor
·Common Base Configuration
·Broadband Class C Operation
·High Efficiency Interdigitated Geometry
·Gold Metalization System
·Internal Input and Output Impedance Matching
·Hermetic Metal/Ceramic Package


Specifications

Parameter Symbol Rating Units
Collector-Emitter Voltage VCES 65 V
Emitter-Base Voltage VEBO 3.0 V
Collector Current (Peak) IC 35 A
Dissipated Power
(Standard Pulse Cond.)		 PTOT 2.9 kW
Dissipated Power
(Mode-S Pulse Train)		 PTOT 700 W
Storage Temperature TSTG -65 to +200
Junction Temperature Tj 200



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