PH1090-6S

PH1090-6S is a type of avionics pulsed power transistor which has many unique features: The first one is NPN silicon Microwave power transistor. The second one is common base configuration.The third one is it is high efficiency interdigitated geometry. The forth one is diffused emitter ballasting resistors. The fifth one is gold matallization system. The sixth one is hermatic metal/ceramic package.The seventh one is internal input and output impedance matching.The eighth one is broadband class C operation.The last one is it is designed for short pulse IFF applications.
 
There are some absolute maximum ratings about PH1090-6S.Collector-emitter votlage(V_CES) is 70 V.Emitter-base voltage(V_EBO) is 3.0 V.Junction temperature(Tj) is 200. Storage temperature(Tstg) is -65 to +200.Collector current(peak)(Ic) is 430 mA.Power dissipation(P_D) is 15 kW.Otherwise, there are some electrical characteristics. Collector-emitter breakdwon voltage(BV_CES) is 70 V min when Ic is 125 mA. Collector-emitter leakage current(I_CES) is 1.5 mA max when V_CE is 40 V.Input power(Pin) is 760 mW max when Vcc is 28 V,Pout is 6.0 W, F is 1090 MHz.Power gian(Gp) is 9.0 dB min when Vcc is 28 V,Pout is 6.0 W, F is 1090 MHz. Collector efficiency is 55% min when Vcc is 28 V,Pout is 6.0 W, F is 1090 MHz.Input return loss is 9 dB min when Vcc is 28 V,Pout is 6.0 W, F is 1090 MHz.Load mismatch tolerance is 10:1 typ when Vcc is 28 V,Pout is 6.0 W, F is 1090MHz.

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