Features: • Designed for Short Pulse IFF Applications• NPN Silicon Microwave Power Transistor• Common Base Configuration• Broadband Class C Operation• High Efficiency Interdigitated Geometry• Diffused Emitter Ballasting Resistors• Gold Metalization System&...
PH1090-550S: Features: • Designed for Short Pulse IFF Applications• NPN Silicon Microwave Power Transistor• Common Base Configuration• Broadband Class C Operation• High Efficiency I...
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Parameter | Symbol | Rating | Units |
Collector-Emitter Voltage | VCES | 80 | V |
Emitter-Base Voltage | VEBO | 3.0 | V |
Collector Current (Peak) | IC | 28 | A |
Total Power Dissipation @ +25 | PTOT | 1800 | W |
Storage Temperature | Tstg | -65 to +200 | |
Junction Temperature | Tj | 200 |
M/A-COM's PH1090-550S is a silicon bipolar NPN transistor intended for use in L-band, 1.2 - 1.4 GHz avionics equipment such as IFF, mode-S and TCAS systems. Designed for common-base, class C broadband pulsed power applications, the PH1090-550S delivers 7.5 dB of gain at 550 watts of output power when operating with short pulse length (10µS), at 1 percent duty cycle. The transistor is housed in a 2-lead, rectangular metal-ceramic flange package, with internal input and output impedance matching networks. Diffused emitter ballast resistors and gold metalization assure ruggedness and long-term reliability.