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PH1090-175L

Features: · NPN Silicon Microwave Power Transistor· Common Base Configuration· Broadband Class C Operation· High Efficiency Interdigitated Geometry· Diffused Emitter Ballasting Resistors· Gold Metalization System· Internal Input and Output Impedance Matching· Hermetic Metal/Ceramic PackageSpecific...

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SeekIC No. : 004460164 Detail

PH1090-175L: Features: · NPN Silicon Microwave Power Transistor· Common Base Configuration· Broadband Class C Operation· High Efficiency Interdigitated Geometry· Diffused Emitter Ballasting Resistors· Gold Metal...

PH1090-175L Data Sheet

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Part Number:
PH1090-175L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

·  NPN Silicon Microwave Power Transistor
·  Common Base Configuration
·  Broadband Class C Operation
·  High Efficiency Interdigitated Geometry
·  Diffused Emitter Ballasting Resistors
·  Gold Metalization System
·  Internal Input and Output Impedance Matching
·  Hermetic Metal/Ceramic Package


Specifications

Parameter Symbol Rating Units
Collector-Emitter Voltage VCES 80 V
Emitter-Base Voltage VEBO 3.0 V
Collector Current (Peak) IC 10.5 A
Total Power Dissipation @ +25 PTOT 375 W
Storage Temperature Tstg -65 to +200
Junction Temperature Tj 200



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