Features: ·NPN Silicon Microwave Power Transistor·Common Emitter Configuration·Broadband Class AB Operation·Interdigitated Geometry·Diffused Emitter Ballasting Resistors·Gold Metalization System·Internal Input and Output Impedance Matching·Hermetic Metal/Ceramic PackageSpecifications Paramete...
PH0814-40: Features: ·NPN Silicon Microwave Power Transistor·Common Emitter Configuration·Broadband Class AB Operation·Interdigitated Geometry·Diffused Emitter Ballasting Resistors·Gold Metalization System·Int...
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Parameter | Symbol | Rating | Units |
Collector-Base Voltage | VCEO | 56 | V |
Collector-Emitter Voltage | VCES | 65 | V |
Emitter-Base Voltage | VEBO | 3.0 | V |
Collector Current (Peak) | IC | 5.6 | A |
Total Power Dissipation | P TOT | 175 | W |
Junction Temperature | TJ | 200 | |
StorageTemperature | T STG | -55 to +150 | |
Thermal Resistance | JC | 1.0 | /W |