PH0810-75

PH0810-75 is a type of wireless bipolar power transistor which has five unique features: The first one is it is designed for linear amplifier applications. The second one is common emitter configuration.The third one is diffused emitter ballasting. The forth one is internal input and output impedance matching. The fifth one is class AB is -32 dBc typ 3rd IMD at 60 watts PEP.
 
There are some absolute maximum ratings about PH0810-75.Collector-emitter votlage(V_CES) is 60 V.Collector-base voltage(V_CBO) is 60 V.Emitter-base voltage(V_EBO) is 3.0 V.Junction temperature(Tj) is 200. Storage temperature(Tstg) is -55 to +150.Collector current(peak)(Ic) is 12 A.Total power dissipation(Ptot) is 125 W.Otherwise, there are some electrical characteristics. Collector-emitter breakdwon voltage(BV_CES) is 60 V min when Ic is 50 mA. Collector-emitter leakage current(I_CES) is 8.0 mA max when V_CE is 26.0 V.Power gain(Gp) is 10 dB min when Vcc is 26 V,Pout is 75 W PEP, F is 900 MHz, I_CQ is 150 mA,F is 100 kHz . Collector efficiency is 35% min when Vcc is 26 V,Pout is 75 W PEP, F is 900 MHz, I_CQ is 150 mA,F is 100 kHz.Input return loss is 10 dB min when Vcc is 26 V,Pout is 75 W PEP, F is 900 MHz, I_CQ is 150 mA,F is 100 kHz.Load mismatch tolerance is 5.0:1 typ when Vcc is 26 V,Pout is 75 W PEP, F is 900 MHz, I_CQ is 150 mA,F is 100 kHz.DC forward current gain is 15 min and 120 typ when V_CE is 5.0 V and I_C is 1.0 A.Collector-emitter breakdown voltage(BV_CEO) is 24 V min when Ic is 100 mA. Emitter-base breakdown voltage(BV_EBO) is 3.0 V min whne I_B is 50 mA.

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