PH0810-4

PH0810-4 is a type of wireless bipolar power transistor which has many unique features: The first one is it is designed for linear amplifier applications. The second one is common emitter configuration.The third one is diffused emitter ballasting. The forth one is internal input and output impedance matching. The fifth one is class AB is -32 dBc typ 3rd IMD at 150 watts PEP.The sixth one is NPN silicon Mircrowave power transistor.The seventh one is gold metallization system.
 
There are some absolute maximum ratings about PH0810-4.Collector-emitter votlage(V_CES) is 60 V.Collector-emitter voltage(V_CEO) is 60 V.Emitter-base voltage(V_EBO) is 3.0 V.Junction temperature(Tj) is 200. Storage temperature(Tstg) is -55 to +150.Collector current(peak)(Ic) is 0.7 A.Total power dissipation(Ptot) is 19.5 W.Otherwise, there are some electrical characteristics. Collector-emitter breakdwon voltage(BV_CES) is 60 V min when Ic is 5 mA. Collector-emitter leakage current(I_CES) is 2.0 mA max when V_CE is 24.0 V.Power gain(Gp) is 14 dB min when Vcc is 24 V,Pout is 4 W PEP, F is 900 MHz, I_CQ is 30 mA. Collector efficiency is 45% min when Vcc is 24 V,Pout is 4 W PEP, F is 900 MHz, I_CQ is 30 mA.Input return loss is 10 dB min when Vcc is 24 V,Pout is 4 W PEP, F is 900 MHz, I_CQ is 30 mA.Load mismatch tolerance is 10:1 typ when Vcc is 24 V,Pout is 4 W PEP, F is 900 MHz, I_CQ is 30 mA.DC forward current gain is 15 min and 120 typ when V_CE is 5.0 V and IC is 1.0 A.

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