DescriptionAdvanced MOCVD PGAS4S12grown multiple quantum well types at 905nm with strained InGaAs active regions to enhance temperature performance and reliability. Peak output powers range from 5 W to 120 W when operated at a 150 ns pulse width. Significant increases in peak power are attainable ...
PGAS4S12: DescriptionAdvanced MOCVD PGAS4S12grown multiple quantum well types at 905nm with strained InGaAs active regions to enhance temperature performance and reliability. Peak output powers range from 5 W...
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