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PGAS3S12

DescriptionAdvanced MOCVD PGAS3S12grown multiple quantum well types at 905nm with strained InGaAs active regions to enhance temperature performance and reliability. Peak output powers range from 5 W to 120 W when operated at a 150 ns pulse width. Significant increases in peak power are attainable ...

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SeekIC No. : 004460066 Detail

PGAS3S12: DescriptionAdvanced MOCVD PGAS3S12grown multiple quantum well types at 905nm with strained InGaAs active regions to enhance temperature performance and reliability. Peak output powers range from 5 W...

PGAS3S12 Data Sheet

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Part Number:
PGAS3S12
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Description

Advanced MOCVD PGAS3S12 grown multiple quantum well types at 905nm with strained InGaAs active regions to enhance temperature performance and reliability. Peak output powers range from 5 W to 120 W when operated at a 150 ns pulse width. Significant increases in peak power are attainable at shorter pulse widths. Package options of PGAS3S12 for this series include C, R, S, U, and Y packages. Other packages may carry price premiums and/or longer lead times.


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