PG1001

PG1001 is a type of silicon planar power transistors.

There are some maximum ratings about PG1001(@25, unless otherwise noted).Collector-base voltage is 80 volts. Collector-emitter voltage is 60 volts.Emitter-base voltage is 8 volts.Collector current is 2 amps. Base current is 0.5 amps.Storage temperature is -65 to 200.Operating junction temp. is -65 to 200.Dissipation @100 case is 4 watts. Linear derating factor is 40 mW/.Otherwise, there  are also some electrical characteristics(@25 case temperature, unless otherwise noted). I_CEX is 10 uA max when V_CE is 60 V,V_BE is -0.5 V and T_C is 150.I_CEX is 10 uA max when V_CE is max rating, V_BE is -0.5 V. I_CBO is 0.1 uA max when V_CB is 60 V and I_E is 0. I_EBO is 10 uA max when V_EB is 8 V.h_FE is 15 min when I_C is 2 A and V_CE is 5 V.V_CE(sat) is 1.5 volts when I_C is 2 A and IB is 0.2 A or is 0.2 volts when I_C is 0.5 A and I_B is 50 mA.V_BE is 1.2 volts max when Ic is 0.5 A and V_CE is 5 V. hfe is 50 min when V_CE is 5 V,Ic is 50 mA , f is 1 kHz.Cob is 50 pf typ when V_CB is 10 V , Ic is 0 and f is 1 MHz.

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