PG-5002

PG-5002 is a gate assisted turn-off thyristor for high current pulse applications. PG-5002 has three unique features: the first one is up to 2,500 Amps peak pulse on-state current. The second one is extermly fast turn-on. The third one is gate assisted turn-off.

There are some absolute maximum ratings about PG-5002. RMS on-state current(I_T(RMS) ) is 110 A.Peak one-cycle surge(non-repetitive) on-state current(60Hz)(I_TSM) is 2000 A. Peak one-cycle surge(non-repetitive) on-state current(50Hz)(I_TSM) is 1800 A.I²t(for fusing),one cycle at 60 Hz(I²t) is 1.7*10⁴ A^sec.Storage temperature(Tstg) is -40 to 150. Operating temperature(T_J) is -40 to 125.Besides, there are also some electrical and thermal characteristics about it.Voltage-blocking state maximums: Forward leakage(peak)(I_DRM) is 15 mA when T_J is 125 and V_DRM applied.Reverse leakage,peak(I_RRM) is 15 mA when TJ is 125 and V_RRM is 100 V. Current-conducting state maximums: Peak on-state voltage(V_TM) is 1.8 V when Tj is 125 and KTM is 600 A. Switching:Min.critical dv/dt exponential to V_DRM (dv/dt) is 20 V/usec when Tj is 125 and V_D is 1/2 VDRM. Thermal: Maximum thermal resistance is .35/watt(junction to case) or is .08/watt(case to sink,lubricated).Gate-maximum parameters: Gate current to trigger(I_GT) is 100 mA when Tj is 25, V_D is 6 V and RL is 2 ohms. Gate voltage to trigger(V_GT) is 1.5 V when Tj is 25, V_D is 6 V and RL is 2 ohms. Non-triggering gate voltage(V_GDM) is .20 volts when Tj is 125 and V_D is 1/2 VDRM. Peak frward gate current(I_GMT) is 50 A. Peak reverse gate voltage(V_GRM) is 5.0 Volts.

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